Friday, June 19, 2015

Defect-Free Zinc-Blende Structured InAs Nanowires Realized by in-situ Two-V/III-Ratio Growth in Molecular Beam Epitaxy

Nanoscale, 2015, Accepted Manuscript
DOI: 10.1039/C5NR03503A, Paper
Zhi Zhang, Zhen-Yu Lu, Ping-Ping Chen, Wei Lu, Jin Zou
In this study, we devised a two-V/III-ratio procedure to control the Au-assisted growth of defect-free InAs nanowires in molecular beam epitaxy. The demonstrated two-V/III-ratio procedure consists of a first high-V/III-ratio...
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