Friday, April 12, 2013

Indirect to direct bandgap transition under uniaxial strain in layered ZnO

(author unknown)



Bipul Rakshit and Priya Mahadevan

The electronic structure of the α-boron-nitride phase of ZnO has been studied using hybrid functionals as well as local density approximation with Hubbard U (LDA + U) calculations. An indirect bandgap of 3.54 eV has been found in hybrid functional calculations, which transforms to a direct bandgap ... [Appl. Phys. Lett. 102, 143116 (2013)] published Fri Apr 12, 2013.



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