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Goki Eda, Arokia Nathan, and Paul Wöbkenberg et al.
We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the upp ... [Appl. Phys. Lett. 102, 133108 (2013)] published Fri Apr 05, 2013.
Link to full article
Goki Eda, Arokia Nathan, and Paul Wöbkenberg et al.
We report unique electrical anisotropy and dielectric properties of graphene oxide (GO) thin films, which allow facile implementation of GO-based monolithic field effect transistors (FETs). We demonstrate that exposure of GO films to hydrogen plasma leads to self-limiting reduction of only the upp ... [Appl. Phys. Lett. 102, 133108 (2013)] published Fri Apr 05, 2013.
Link to full article
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