Wednesday, April 10, 2013

Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction

Prof. G T Du



Nanoscale , 2013, Accepted Manuscript

DOI: 10.1039/C3NR33445G, Paper

Zhifeng Shi, Yuantao Zhang, Xiaochuan Xia, Wang Zhao, Hui Wang, Long Zhao, Xin Dong, Baolin Zhang, Prof. G T Du

Electrically pumped lasing action has been realized in ZnO from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterostructure, an ultralow threshold of 3.9 mA was obtained. The mechanism of laser is associated with...

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